Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will show how tuning the Area Dose factor and the PMMA thickness it was possible to determine the correct and reproducible parameters that allows to obtain well defined electron-beam features with a 4:1 aspect ratio. Such high aspect ratio opens the possibility to realize an electron-beam lithography lift-off process by using a standard e-beam resist. © 2016 Author(s)

Cu-Si nanocomposites based on porous silicon matrix

Cu-Si nanocomposites formed by an immersion displacement deposition of Cu into porous silicon (PS) matrix have been experimentally studied. SEM and AES were used to investigate the structure and elemental composition of Cu-Si samples. The top part of the Cu-PS samples is shown to demonstrate the following structure: large faceted Cu grains at the top, a porous fine-grained copper film underneath the large grains, and the copper pointed rods extended from the surface into the PS layer. The top part of the silicon skeleton of the PS layer is converted into the copper by the etching followed by Cu displacement deposition. The porosity of the porous layer and displacement deposition times are found to form Cu-Si nanocomposites of various structures and various Cu-Si contents because of various extent of the silicon skeleton transformation into copper. © (2009) Trans Tech Publications

Porous silicon solar cells

We developed a new process for the fabrication of crystalline solar cell, based on an ultrathin silicon membrane, taking advantage of porous silicon technology. The suggested architecture allows the costs reduction of silicon based solar cell reusing the same wafer to produce a great number of membranes. The architectures combines the efficiency of crystalline silicon solar cell, with the great absorption of porous silicon, and with a more efficient way to use the material. The new process faces the main challenge to achieve an effective and not expensive passivation of the porous silicon surface, in order to achieve an efficient photovoltaic device. At the same time the process suggests a smart way to selective doping of the macroporous silicon layers despite the through-going pores. © 2015 IEEE. SciVal Topic Prominence  Topic: Porous silicon | Silicon | macroporous silicon Prominence percentile: 66.984  Author keywords nanofabricationporous siliconsilicon nanoelectronicssolar cells Indexed keywords Engineering controlled terms: Crystalline materialsNanoelectronicsNanostructured materialsNanotechnologyPorous siliconSiliconSilicon wafersSolar cells Engineering uncontrolled terms Crystalline silicon solar cellsCrystalline solar cellsMacro porous siliconPhotovoltaic devicesPorous silicon surfacesPorous silicon technologySilicon nanoelectronicsUltrathin silicon membrane Engineering main heading: Silicon solar cells ISBN: 978-146738155-0 Source Type: Conference Proceeding Original language: English DOI: 10.1109/NANO.2015.7388710 Document Type: Conference Paper Sponsors: Nanotechnology Council Publisher: Institute of Electrical and Electronics Engineers Inc. References (9) View in search results format ▻ All Export  Print  E-mail Save to PDF Create bibliography 1 (2012) International Technology Roadmap for Photovoltaics Results 2012. Cited 24 times. ITRPV, Third Edition, Berlin 2012 www.ITRPV.net 2 Lehmann, V., Honlein, W., Stengl, R., Willer, J., Wendt, H. (1992) Verfahren Zur Herstellung Einer Solarzelle Aus Einer Substratscheibe. Cited 6 times. German patent DE4204455C1; Filing date: 29. 01. 3 Brendel, R., Ernst, M. Macroporous Si as an absorber for thin-film solar cells (2010) Physica Status Solidi - Rapid Research Letters, 4 (1-2), pp. 40-42. Cited 22 times. http://www3.interscience.wiley.com/cgi-bin/fulltext/123215552/PDFSTART doi: 10.1002/pssr.200903372 Locate full-text(opens in a new window) View at Publisher 4 Ernst, M., Brendel, R., Ferré, R., Harder, N.-P. Thin macroporous silicon heterojunction solar cells (2012) Physica Status Solidi - Rapid Research Letters, 6 (5), pp. 187-189. Cited 16 times. doi: 10.1002/pssr.201206113 Locate full-text(opens in a new window) View at Publisher 5 Ernst, M., Brendel, R. Macroporous silicon solar cells with an epitaxial emitter (2013) IEEE Journal of Photovoltaics, 3 (2), art. no. 6472253, pp. 723-729. Cited 7 times. doi: 10.1109/JPHOTOV.2013.2247094 Locate full-text(opens in a new window) View at Publisher 6 Ernst, M., Schulte-Huxel, H., Niepelt, R., Kajari-Schröder, S., Brendel, R. Thin crystalline macroporous silicon solar cells with ion implanted emitter (Open Access) (2013) Energy Procedia, 38, pp. 910-918. Cited 2 times. http://www.sciencedirect.com/science/journal/18766102 doi: 10.1016/j.egypro.2013.07.364 Locate full-text(opens in a new window) View at Publisher 7 Nenzi, P., Kholostov, K., Crescenzi, R., Bondarenka, H., Bondarenko, V., Balucani, M. Electrochemically etched TSV for porous silicon interposer technologies (2013) Proceedings - Electronic Components and Technology Conference, art. no. 6575887, pp. 2201-2207. Cited 2 times. ISBN: 978-147990233-0 doi: 10.1109/ECTC.2013.6575887 Locate full-text(opens in a new window) View at Publisher 8 Perticaroli, S., Varlamava, V., Palma, F. Microwave sensing of nanostructured semiconductor surfaces (2014) Applied Physics Letters, 104 (1), art. no. 013110. Cited 3 times. doi: 10.1063/1.4861424 Locate full-text(opens in a new window) View at Publisher 9 De Cesare, G., Caputo, D., Tucci, M. Electrical properties of ITO/crystalline-silicon contact at different deposition temperatures (2012) IEEE Electron Device Letters, 33 (3), art. no. 6142006, pp. 327-329. Cited 28 times. doi: 10.1109/LED.2011.2180356 Locate full-text(opens in a new window) View at Publisher © Copyright 2017 Elsevier B.V., All rights reserved. ◅ Back to results ◅ Previous 3of10 Next ▻  Top of page Metrics Learn more about article metrics in Scopus (opens in a new window)  0 Citations in Scopus 0 Learn more about Field-Weighted Citation Impact Field-Weighted Citation Impact PlumX Metrics Usage, Captures, Mentions, Social Media and Citations beyond Scopus.  Cited by 0 documents Inform me when this document is cited in Scopus: Set citation alert ▻ Set citation feed ▻ Related documents Thin crystalline macroporous silicon solar cells with ion implanted emitter Ernst, M. , Schulte-Huxel, H. , Niepelt, R. (2013) Energy Procedia Multilayer etching for kerf-free solar cells from macroporous silicon Schäfer, S. , Ernst, M. , Kajari-Schröder, S. (2013) Energy Procedia Macroporous silicon solar cells with an epitaxial emitter Ernst, M. , Brendel, R. (2013) IEEE Journal of Photovoltaics View all related documents based on references Find more related documents in Scopus based on: Authors ▻ Keywords ▻ About Scopus What is Scopus Content coverage Scopus blog Scopus API Privacy matters Language 日本語に切り替える 切换到简体中文 切換到繁體中文 Русский язык Customer Service Help Contact us Elsevier Terms and conditions ↗ Privacy policy ↗ Copyright © 2018 Elsevier B.V ↗. All rights reserved. Scopus® is a registered trademark of Elsevier B.V. We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies. RELX Group We developed a new process for the fabrication of crystalline solar cell, based on an ultrathin silicon membrane, taking advantage of porous silicon technology. The suggested architecture allows the costs reduction of silicon based solar cell reusing the same wafer to produce a great number of membranes. The architectures combines the efficiency of crystalline silicon solar cell, with the great absorption of porous silicon, and with a more efficient way to use the material. The new process faces the main challenge to achieve an effective and not expensive passivation of the porous silicon surface, in order to achieve an efficient photovoltaic device. At the same time the process suggests a smart way to selective doping of the macroporous silicon layers despite the through-going pores

Design of a tri-axial surface micromachined MEMS vibrating gyroscope

Gyroscopes are one of the next killer applications for the MEMS (Micro-Electro-Mechanical-Systems) sensors industry. Many mature applications have already been developed and produced in limited volumes for the automotive, consumer, industrial, medical, and military markets. Plenty of high-volume applications, over 100 million per year, have been calling for low-cost gyroscopes. Bulk silicon is a promising candidate for low-cost gyroscopes due to its large scale availability and maturity of its manufacturing industry. Nevertheless, it is not suitable for a real monolithic IC integration and requires a dedicated packaging. New designs are supposed to eliminate the need for magnets and metal case package, and allow for a real monolithic MEMS-IC (Integrated Circuit) electronic system. In addition, a drastic cost reduction could be achieved by utilizing off-the-shelf plastic packaging with lead frames for the final assembly. The present paper puts forward the design of a novel tri-axial gyroscope based on rotating comb-drives acting as both capacitive sensors and actuators. The comb-drives are comprised of a single monolithic moving component (rotor) and fixed parts (stators). The former is made out of different concentrated masses connected by curved silicon beams in order to decouple the motion signals. The sensor was devised to be fabricated through the PolyMUMPs® process and it is intended for working in air in order to semplify the MEMS-IC monolithic integration

A Class-AB/D Audio Power Amplifier for Mobile Applications Integrated Into a 2.5G/3G Baseband Processor

A filterless class-AB/D audio power amplifier integrated into a feature-rich 2.5G/3G baseband processor in standard 65-nm CMOS technology is designed for direct battery hookup in mobile phone applications. Circuit techniques are used to overcome the voltage limitations of standard MOS transistors for operation at voltage levels of 2.5-4.8 V. Both amplifiers can drive more than 650 mW into an 8-Omega load with maximum distortion levels of 1% and 5% for class-D and class-AB, respectively, all from a 3.6-V power supply. The achieved power-supply-rejection ratios are 72 and 84 dB, respectively. The mono implementation of both amplifiers together is 0.44 mm(2)

Bending properties in oxidized porous silicon waveguides

The greatest limit in high-speed communications between different circuit blocks is due to the delays introduced by metal interconnections. Knock-down wire communication bottleneck is, therefore, one of the best goals that current research could reach in the held of fast electronics. A possible solution is to build fast optical links and even better if the technology is based on silicon. To attain these ends, we have made studies into possibility to fabricate optical waveguide based on oxidized porous silicon. In the last few years, such a device: was realized and characterized. Waveguiding in the visible and in the near infrared was demonstrated, With propagation losses of about 3-5 dB/cm for a light with a wavelength of 632.8 nm. Moreover, a design feature of an integrated waveguide based on oxidized porous silicon is that it offers a spontaneous bending of the waveguiding layer at its ends. The edge bending is provided by a convex camber of a leading edge of forming porous silicon. This bending can be exploited to promote a vertical light output with no use of any additional devices. The paper discusses the properties of edge bending, evaluation of the light losses depending on the radius of curvature, and analysis of possibilities to reduce these losses. (C) 2001 Elsevier Science Ltd. All rights reserved

Er-doped Oxidized Porous Silicon Waveguides

The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n+-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO3)3 aqueous solution. A correlation between Er concentration and refractive index profiles has shown dominant core doping with Er relative to cladding regions. Reported Er concentration of 0.8 at.% in the OPSWG is large enough to attain the amplification effect

Electric Field Bridging-Effect in Electrified Microfibrils’ Scaffolds

Introduction: The use of biocompatible scaffolds combined with the implantation of neural stem cells, is increasingly being investigated to promote the regeneration of damaged neural tissue, for instance, after a Spinal Cord Injury (SCI). In particular, aligned Polylactic Acid (PLA) microfibrils’ scaffolds are capable of supporting cells, promoting their survival and guiding their differentiation in neural lineage to repair the lesion. Despite its biocompatible nature, PLA is an electrically insulating material and thus it could be detrimental for increasingly common scaffolds’ electric functionalization, aimed at accelerating the cellular processes. In this context, the European RISEUP project aims to combine high intense microseconds pulses and DC stimulation with neurogenesis, supported by a PLA microfibrils’ scaffold. Methods: In this paper a numerical study on the effect of microfibrils’ scaffolds on the E-field distribution, in planar interdigitated electrodes, is presented. Realistic microfibrils’ 3D CAD models have been built to carry out a numerical dosimetry study, through Comsol Multiphysics software. Results: Under a voltage of 10 V, microfibrils redistribute the E-field values focalizing the field streamlines in the spaces between the fibers, allowing the field to pass and reach maximum values up to 100 kV/m and values comparable with the bare electrodes’ device (without fibers). Discussion: Globally the median E-field inside the scaffolded electrodes is the 90% of the nominal field, allowing an adequate cells’ exposure

The Italian National Project of Astrobiology-Life in Space-Origin, Presence, Persistence of Life in Space, from Molecules to Extremophiles

The \u2018\u2018Life in Space\u2019\u2019 project was funded in the wake of the Italian Space Agency\u2019s proposal for the development of a network of institutions and laboratories conceived to implement Italian participation in space astrobiology experiments